diode,SBDD10200CT,TO-252 package diode

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Product Tags

2

Symbol Parameter Value Unit
VRRM Peak repetitive reverse voltage  200  V
VRWM Working peak reverse voltage
VR DC blocking voltage
VR(RMS) RMS reverse voltage 140 V
IO Average rectified output current 10 A
IFSM Non-Repetitive peak forward surge current (8.3ms half sine wave) 150 A
PD Power dissipation 1.25 W
RΘJA Thermal resistance from junction to ambient 50.0 ℃/W
Tj Junction temperature 150
Tstg Storage temperature -55~+150

ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)

 

Parameter Symbol Test conditions Min Typ Max

Unit

Reverse voltage V(BR) IR=0.1mA 200 V
Reverse current IR VR=200V 0.1

mA

 Forward voltage VF1 IF=5A 0.92 V
VF2* IF=10A 1.1 V

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

Typical Characteristics

Symbol Parameter Value Unit
VRRM Peak repetitive reverse voltage  

200 

VVRWMWorking peak reverse voltageVRDC blocking voltageVR(RMS)RMS reverse voltage140VIOAverage rectified output current10AIFSMNon-Repetitive peak forward surge current (8.3ms half sine wave)150APDPower dissipation1.25WRΘJAThermal resistance from junction to ambient50.0℃/WTjJunction temperature150℃TstgStorage temperature-55~+150℃

ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max

Unit

Reverse voltage V(BR) IR=0.1mA 200 V
Reverse current IR VR=200V 0.1

mA

 

Forward voltageVF1IF=5A  0.92VVF2*IF=10A  1.1V

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

Typical Characteristics

3

TO-252-2L Package Outline Dimensions

4

TO-252-2L Suggestesd Pad Layout

5


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