diode,SBDD10200CT,TO-252 package diode
| Symbol | Parameter | Value | Unit |
| VRRM | Peak repetitive reverse voltage | 200 | V |
| VRWM | Working peak reverse voltage | ||
| VR | DC blocking voltage | ||
| VR(RMS) | RMS reverse voltage | 140 | V |
| IO | Average rectified output current | 10 | A |
| IFSM | Non-Repetitive peak forward surge current (8.3ms half sine wave) | 150 | A |
| PD | Power dissipation | 1.25 | W |
| RΘJA | Thermal resistance from junction to ambient | 50.0 | ℃/W |
| Tj | Junction temperature | 150 | ℃ |
| Tstg | Storage temperature | -55~+150 | ℃ |
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
| Parameter | Symbol | Test conditions | Min | Typ | Max |
Unit |
| Reverse voltage | V(BR) | IR=0.1mA | 200 | V | ||
| Reverse current | IR | VR=200V | 0.1 |
mA |
||
| Forward voltage | VF1 | IF=5A | 0.92 | V | ||
| VF2* | IF=10A | 1.1 | V |
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Typical Characteristics
| Symbol | Parameter | Value | Unit |
| VRRM | Peak repetitive reverse voltage |
200
VVRWMWorking peak reverse voltageVRDC blocking voltageVR(RMS)RMS reverse voltage140VIOAverage rectified output current10AIFSMNon-Repetitive peak forward surge current (8.3ms half sine wave)150APDPower dissipation1.25WRΘJAThermal resistance from junction to ambient50.0℃/WTjJunction temperature150℃TstgStorage temperature-55~+150℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
| Parameter | Symbol | Test conditions | Min | Typ | Max |
Unit |
| Reverse voltage | V(BR) | IR=0.1mA | 200 | V | ||
| Reverse current | IR | VR=200V | 0.1 |
mA |
||
Forward voltageVF1IF=5A 0.92VVF2*IF=10A 1.1V
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Typical Characteristics
TO-252-2L Package Outline Dimensions
TO-252-2L Suggestesd Pad Layout
