diode,1SS226,Switching diode

Short Description:


Product Detail

Product Tags

1

Parameter

Symbol

Limit

Unit

Non-Repetitive Peak Reverse Voltage

VRM

85

V

Peak Repetitive Peak Reverse Voltage Working Peak Reverse VoltageDC Blocking Voltage

VRRM VRWM

VR

80

V

Forward Continuous Current

IFM

300

mA

Average Rectified Output Current

IO

100

mA

Non-Repetitive Peak Forward Surge Current @t=8.3ms

IFSM

2

A

Power Dissipation

PD

150

mW

Thermal Resistance from Junction to Ambient

RθJA

833

℃/W

Junction Temperature

TJ

150

Storage Temperature

TSTG

-55~+150

ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)

Parameter

Symbol

Test conditions Min

Max

Unit

Reverse breakdown voltage

V(BR)

IR= 100uA 80

V

Reverse voltage leakage current

IR

VR=80V

0.5

uA

Forward voltage

VF

IF=100mA

1.2

V

Diode capacitance

CD

VR=0V, f=1MHz

3

pF

Reverse recovery time

t rr

IF=10mA

4

ns

Typical Characteristics

2

2 3 4 5


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