diode,1SS226,Switching diode
| Parameter |
Symbol |
Limit |
Unit |
| Non-Repetitive Peak Reverse Voltage |
VRM |
85 |
V |
| Peak Repetitive Peak Reverse Voltage Working Peak Reverse VoltageDC Blocking Voltage |
VRRM VRWM VR |
80 |
V |
| Forward Continuous Current |
IFM |
300 |
mA |
| Average Rectified Output Current |
IO |
100 |
mA |
| Non-Repetitive Peak Forward Surge Current @t=8.3ms |
IFSM |
2 |
A |
| Power Dissipation |
PD |
150 |
mW |
| Thermal Resistance from Junction to Ambient |
RθJA |
833 |
℃/W |
| Junction Temperature |
TJ |
150 |
℃ |
| Storage Temperature |
TSTG |
-55~+150 |
℃ |
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
| Parameter |
Symbol |
Test conditions | Min |
Max |
Unit |
| Reverse breakdown voltage |
V(BR) |
IR= 100uA | 80 |
V |
|
| Reverse voltage leakage current |
IR |
VR=80V |
0.5 |
uA |
|
| Forward voltage |
VF |
IF=100mA |
1.2 |
V |
|
| Diode capacitance |
CD |
VR=0V, f=1MHz |
3 |
pF |
|
| Reverse recovery time |
t rr |
IF=10mA |
4 |
ns |
Typical Characteristics
