diode,1N4448W,Switching diode
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
| Parameter |
Symbol |
Limit |
Unit |
| Non-Repetitive Peak Reverse Voltage |
VRM |
100 |
V |
| Peak Repetitive Peak Reverse Voltage Working Peak Reverse VoltageDC Blocking Voltage |
VRRM VRWM VR |
75 |
V |
| RMS Reverse Voltage |
VR(RMS) |
53 |
V |
| Forward Continuous Current |
IFM |
500 |
mA |
| Average Rectified Output Current |
IO |
250 |
mA |
| Non-Repetitive Peak Forward Surge Current @t=8.3ms |
IFSM |
2.0 |
A |
| Power Dissipation |
Pd |
500 |
mW |
| Thermal Resistance Junction to Ambient |
RθJA |
250 |
℃/W |
| Junction Temperature |
Tj |
150 |
℃ |
| Storage Temperature |
TSTG |
-55~+150 |
℃ |
Electrical Ratings @Ta=25℃
|
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Conditions |
| Reverse Breakdown Voltage |
V (BR)R |
75 |
V |
IR=10μA |
||
| Forward Voltage |
VF1 |
0.62 |
0.72 |
V |
IF=5mA |
|
|
VF2 |
0.855 |
V |
IF=10mA |
|||
|
VF3 |
1.0 |
V |
IF=100mA |
|||
|
VF4 |
1.25 |
V |
IF=150mA |
|||
| Reverse Current |
IR1 |
2.5 |
μA |
VR=75V |
||
|
IR2 |
25 |
nA |
VR=20V |
|||
| Capacitance Between Terminals |
CT |
4 |
pF |
VR=0V,f=1MHz |
||
| Reverse Recovery Time |
trr |
4 |
ns |
IF=IR=10mA Irr=0.1XIR,RL=100Ω |
Typical Characteristics
