diode,1N4448W,Switching diode

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Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25

Parameter

Symbol

Limit

Unit

Non-Repetitive Peak Reverse Voltage

VRM

100

V

Peak Repetitive Peak Reverse Voltage Working Peak Reverse VoltageDC Blocking Voltage

VRRM VRWM

VR

 

75

 

V

RMS Reverse Voltage

VR(RMS)

53

V

Forward Continuous Current

IFM

500

mA

Average Rectified Output Current

IO

250

mA

Non-Repetitive Peak Forward Surge Current @t=8.3ms

IFSM

2.0

A

Power Dissipation

Pd

500

mW

Thermal Resistance Junction to Ambient

RθJA

250

℃/W

Junction Temperature

Tj

150

Storage Temperature

TSTG

-55~+150

Electrical Ratings @Ta=25

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

Reverse Breakdown Voltage

V (BR)R

75

V

IR=10μA

  Forward Voltage

VF1

0.62

0.72

V

IF=5mA

VF2

0.855

V

IF=10mA

VF3

1.0

V

IF=100mA

VF4

1.25

V

IF=150mA

 Reverse Current

IR1

2.5

μA

VR=75V

IR2

25

nA

VR=20V

Capacitance Between Terminals

CT

4

pF

VR=0V,f=1MHz

 Reverse Recovery Time  

trr

 

4

 

ns

IF=IR=10mA

Irr=0.1XIR,RL=100Ω

Typical Characteristics

2 3 4 5 6


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